InAs/GaSb/AlSb quantum well structure preparation and electron spin resonance measurements

0486908 - FZÚ 2018 RIV SK eng C - Conference Paper (international conference)
Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Dominec, Filip - Mikhailova, M. P. - Veinger, A.I. - Kochman, I.V. - Danilov, L.V.
InAs/GaSb/AlSb quantum well structure preparation and electron spin resonance measurements.
19th Conference of Czech and Slovak Physicists Proceedings. Košice: Slovak Physical Society, 2017, s. 31-32. ISBN 978-80-89855-04-9.
[Conference of Czech and Slovak Physicists /19./. Prešov (SK), 04.09.2017-07.09.2017]
R&D Projects: GA MŠMT LM2015087; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : GaSb InAs CQW * AlSb * MOVPE * electron spin resonance
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

InAs/GaSb/AlSb structures were grown on n-GaSb:Te substrate in Laytec EPIRAS 200TT equipped MOVPE (MetalOrganic Vapor Phase Epitaxy) AIXTRON 200 machine by low-pressure MOVPE at 560 °C. 3 nm thick p-GaSb cap layer was prepared on the top of each structure.
Sb-rich interfaces between InAs and GaSb QWs were realized by special switching sequence of metalorganics. The angle dependences were measured at the two temperatures 2.7 K and 10 K. The magnetoresistance was measured by the microwave radiation reflect from the sample. The signal from the electrons in the substrate predominates over the signal from the electrons in the QW.
Permanent Link: http://hdl.handle.net/11104/0281619