Planar defects and dislocations in C40 and FCC lattices

0486449 - FZÚ 2018 RIV CH eng C - Conference Paper (international conference)
Paidar, Václav
Planar defects and dislocations in C40 and FCC lattices.
MATERIALS STRUCTURE & MICROMECHANICS OF FRACTURE VII. Zurich: Trans Tech Publications, 2014 - (Šandera, P.), s. 67-70. Key Engineering Materials, 592-593. ISBN 978-3-03785-934-6. ISSN 1013-9826.
[MSMF 7 - International Conference on Materials Structure and Micromechanics of Fracture /7./. Brno (CZ), 01.07.2013-03.07.2013]
Institutional support: RVO:68378271
Keywords : transition metal silicides * C40 lattices * stacking fault like defects * dislocation cores
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://www.scientific.net/KEM.592-593.67

Atomic planes at three different positions ABC form the stacking along the 111 directions in the FCC lattice and similarly along the 0001 hexagonal axis in the C40 structure in transition metal silicides. However, the structures of suicides are constituted of several stacking of identical atomic planes at four different positions: AB in C11(b) structures of e.g. MoSi2, ABC in C40 structures of e.g. VSi2 and ABDC in C54 structures of e.g. TiSi2 disilicides. The occurrence of the fourth position essentially influences the properties of defects and consequently the mechanical properties of C40 materials.

Permanent Link: http://hdl.handle.net/11104/0281257