Graphite/SiC junctions and their electrical characteristics

0484796 - ÚFE 2018 RIV DE eng J - Journal Article
Yatskiv, Roman - Grym, Jan
Graphite/SiC junctions and their electrical characteristics.
Physica Status Solidi A. Roč. 214, č. 9 (2017), č. článku 1700143. ISSN 1862-6300. E-ISSN 1862-6319
R&D Projects: GA ČR(CZ) GA17-00546S
Institutional support: RVO:67985882
Keywords : Silicon carbide * Barrier homogeneities * Graphite
OECD category: Electrical and electronic engineering
Impact factor: 1.795, year: 2017

Current-voltage characteristics of rectifying graphite/SiC junctions are investigated in a wide temperature range. The main parameters of the diodes, the ideality factor, and the Schottky barrier height show strong temperature dependence. Such behavior is interpreted on the basis of standard thermionic emission theory assuming Gaussian distribution of the barrier heights due to inhomogeneity at the graphite/SiC interfac
Permanent Link: http://hdl.handle.net/11104/0279938