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Slumping of Si wafers at high temperature
- 1.0481625 - ASÚ 2018 US eng C - Conference Paper (international conference)
Míka, M. - Jankovský, O. - Šimek, P. - Lutyakov, O. - Havlíková, R. - Šofer, Z. - Hudec, René - Pína, L. - Inneman, A. - Švéda, L. - Maršíková, V.
Slumping of Si wafers at high temperature.
Damage to VUV, EUV, and X-ray Optics IV; and EUV and X-ray Optics: Synergy between Laboratory and Space III. Bellingham: SPIE, 2013 - (Juha, L.; Bajt, S.; London, R.; Hudec, R.; Pína, L.). Proceedings of SPIE, 8777. ISBN 9780819495792.
[Damage to VUV, EUV, and X-ray Optics IV; and EUV and X-ray Optics: Synergy between Laboratory and Space III. Praha (CZ), 15.04.2013-18.04.2013]
Institutional support: RVO:67985815
Keywords : silicon * x-ray telescope * thermal forming
OECD category: Electrical and electronic engineering
Space X-ray imaging telescopes have delivered unique observations that have been significantly contributing to many important discoveries of current astrophysics. For future telescopes with a larger collecting area and a better angular resolution, the limiting factor is their X-ray reflecting mirror array. Therefore, for a successful construction of future lightweight and highly reflecting X-ray mirrors, new cost-effective technologies and progressive materials are needed. Currently, the very promising materials are silicon foils which are commercially produced on a large scale. We focused on the plastic deformation of thin monocrystalline silicon foils, which was necessary for the precise thermal forming of the foils to 3D shapes. To achieve the plastic deformation, we applied forced slumping at temperatures from 1200 to 1400 degrees C. The final shapes and the surface quality of the foils were measured using a Taylor Hobson contact profilometer and examined with an Atomic Forced Microscopy. We studied the effects of temperature, applied slumping force, heat-treatment time, crystal orientation, and furnace atmosphere on the shape and surface quality of the formed foils.
Permanent Link: http://hdl.handle.net/11104/0277159
Number of the records: 1