Modeling of silicon in femto second laser-induced modification regimes: accounting for ambipolar diffusion

0481264 - FZÚ 2018 RIV US eng C - Conference Paper (international conference)
Derrien, Thibault - Bulgakova, Nadezhda M.
Modeling of silicon in femto second laser-induced modification regimes: accounting for ambipolar diffusion.
Nonlinear Optics and Applications X. Bellingham: SPIE, 2017 - (Bertolotti, M.; Haus, J.; Zheltikov, A.), Roč. 10228 (2017), s. 1-13, č. článku 102280E. Proceedings of SPIE, 10228. ISBN 978-1-5106-0957-0. ISSN 0277-786X.
[Nonlinear Optics and Applications Conference /7./. Prague (CZ), 24.04.2017-25.04.2017]
R&D Projects: GA MŠMT LO1602; GA MŠMT LM2015086; GA MŠMT EF15_003/0000445
EU Projects: European Commission(XE) 657424 - QuantumLaP
Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445
Institutional support: RVO:68378271
Keywords : electron-hole plasmas * carrier dynamics * phase-explosion * semiconductors * surface * ablation * density * pulses * vaporization * reflectivity
OECD category: Optics (including laser optics and quantum optics)

During the last decades, femtosecond laser irradiation of materials has led to the emergence of various applications based on functionalization of surfaces at the nano-and microscale. Via inducing a periodic modification on material surfaces (band gap modification, nanostructure formation, crystallization or amorphization), optical and mechanical properties can be tailored, thus turning femtosecond laser to a key technology for development of nanophotonics, bionanoengineering, and nanomechanics. Although modification of semiconductor surfaces with femtosecond laser pulses has been studied for more than two decades, the dynamics of coupling of intense laser light with excited matter remains incompletely understood.
Permanent Link: http://hdl.handle.net/11104/0276863