Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration

0481258 - FZÚ 2018 RIV US eng J - Journal Article
Rucavado, E. - Jeangros, Q. - Urban, D. F. - Holovský, Jakub - Remeš, Zdeněk - Duchamp, M. - Landucci, F. - Dunin-Borkowski, R.E. - Körner, W. - Elsässer, C. - Hessler-Wyser, A. - Morales-Masis, M. - Ballif, C.
Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration.
Physical Review B. Roč. 95, č. 24 (2017), s. 1-9, č. článku 245204. ISSN 2469-9950. E-ISSN 2469-9969
R&D Projects: GA ČR GC16-10429J
Institutional support: RVO:68378271
Keywords : TCO * ZnO * ZnSnO * amorphous TCO * photothermal deflection spectroscopy * DFT
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.813, year: 2017

The link between sub-bandgap states and optoelectronic properties is investigated for amorphous zinc tin oxide (a-ZTO) thin films deposited by RF sputtering. a-ZTO samples were annealed up to 500 °C in oxidizing, neutral, and reducing atmospheres before characterizing their structural and optoelectronic properties by photothermal deflection spectroscopy, near-infrared-visible UV spectrophotometry, Hall effect, Rutherford backscattering, hydrogen forward scattering and transmission electron microscopy. By combining the experimental results with density functional theory calculations, oxygen deficiencies and resulting metal atoms clusters are identified as the source of subgap states, some of which act as electron donors but also as free electron scattering centers. The role of hydrogen on the optoelectronic properties is also discussed. An amorphous indium-free transparent conductive oxide, with a high thermal stability and an electron mobility up to 35cm^2/V/s, is demonstrated.
Permanent Link: http://hdl.handle.net/11104/0276856