Vertical transport in type-II Heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

0479789 - FZÚ 2018 RIV RU eng J - Journal Article
Mikhailova, M. P. - Berezovets, V.A. - Parfeniev, R.V. - Danilov, L.V. - Safonchik, M.O. - Hospodková, Alice - Pangrác, Jiří - Hulicius, Eduard
Vertical transport in type-II Heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field.
Semiconductors. Roč. 51, č. 10 (2017), s. 1343-1349. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA MŠMT LM2015087; GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs * GaSb * composite QW * magnetic properties
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 0.672, year: 2017

Vertical transport in type-II heterojunctions with a two-barrier AlSb/InAs/GaSb/AlSb quantum well grown by MOVPE on an n-InAs substrate is investigated. Shubnikov–de Haas oscillations are measured at two orientations of the magnetic field (perpendicular and parallel) relative to the structure plane. It is established that conduction in the structure under study is occurs via both three-dimensional substrate electrons and two-dimensional QW electrons under quantum limit conditions for bulk electrons (B > 5 T). The electron concentrations in the substrate and InAs QW are determined. The g-factor for 3D carriers is determined by spin splitting of the zero Landau level. It is shown that the conductance maxima in a magnetic field perpendicular to the structure plane and parallel to the current across the structure in fields B > 9 T correspond to the resonant tunneling of 3D electrons from the emitter substrate into the InAs QW through the 2D electron states of the Landau levels.
Permanent Link: http://hdl.handle.net/11104/0275726