Structural and optical properties of Gd implanted GaN with various crystallographic orientations

0479677 - ÚJF 2018 RIV CH eng J - Journal Article
Macková, Anna - Malinský, Petr - Jagerová, Adéla - Sofer, Z. - Klímová, K. - Sedmidubský, D. - Pristovsek, M. - Mikulics, M. - Lorinčík, Jan - Bottger, R. - Akhmadaliev, S.
Structural and optical properties of Gd implanted GaN with various crystallographic orientations.
Thin Solid Films. Roč. 638, SEP (2017), s. 63-72. ISSN 0040-6090. E-ISSN 1879-2731
R&D Projects: GA ČR GA13-20507S; GA ČR GA15-01602S; GA MŠMT LM2015056
Institutional support: RVO:67985882 ; RVO:61389005
Keywords : GaN implantation * RBS channelling * optical properties of Gd implanted GaN
OECD category: 1.3 Physical sciences; Optics (including laser optics and quantum optics) (URE-Y)
Impact factor: 1.939, year: 2017

Structure, morphology, and optical properties of Gd implanted GaN epitaxial layers were studied for (0001), (11-20), and (11-22) orientations. The GaN layers grown by MOVPE on sapphire were subsequently implanted with 200 keV Gd+ ions using fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Dopant depth profiling was accomplished by Rutherford Back-Scattering spectrometry (RBS). Structural and optical changes during subsequent annealing were characterized by RBS, Raman spectroscopy, and photoluminescence measurements. Post-implantation annealing induced a structural reorganization of GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the implantation fluence and on crystallographic orientation. The defect density depth distribution was evaluated by RBS. The surface morphology and optical properties depend on particular crystallographic orientation.
Permanent Link: http://hdl.handle.net/11104/0275642