Cu-Si nanoobjects prepared by CVD on Cu/Cu.sub.5./sub.Si-substrates using various precursors (SiH.sub.4./sub., EtSiH.sub.3./sub., BuSiH.sub.3./sub.) with added H.sub.2./sub. or air

0479312 - FZÚ 2018 RIV NL eng J - Journal Article
Klementová, Mariana - Krabáč, Lubomír - Brázda, Petr - Palatinus, Lukáš - Dřínek, Vladislav
Cu-Si nanoobjects prepared by CVD on Cu/Cu₅Si-substrates using various precursors (SiH₄, EtSiH₃, BuSiH₃) with added H₂ or air.
Journal of Crystal Growth. Roč. 465, May (2017), s. 6-11. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GC15-08842J
Institutional support: RVO:68378271 ; RVO:67985858
Keywords : crystal morphology * nanostructures * chemical vapor deposition processes * alloys
OECD category: Inorganic and nuclear chemistry; Physical chemistry (UCHP-M)
Impact factor: 1.742, year: 2017

The CVD method was employed to synthesize nanoobjects of Cu-Si phases at temperature of about 500 °C. Cu/Cu5Si-substrates and various Si-containing precursors (SiH4, EtSiH3, BuSiH3) with/without added H2 or air were used. Nanoobjects of various morphologies (nanoplatelets of eta'-Cu3Si, nanoribbons and nanorods of eta''-Cu3Si, and nanowires of gamma-Cu83Si17) were obtained depending on the experimental conditions, mainly type and pressure of precursor. A mixture of Si-containing precursor and H2/air promotes the growth of nanoobjects compared to using the pure Si-containing precursor. With incre asing pressure of precursors the morphology changes from 1D (nanowires) to 2D (nanoribbons, nanoplatelets). Nanoobjects grow via the non-catalytic VS mechanism.
Permanent Link: http://hdl.handle.net/11104/0275555