Challenges and technological aspects of boron incorporation into AlGaN and AlN layers prepared by MOVPE

0479307 - FZÚ 2018 RIV FR eng C - Conference Paper (international conference)
Zíková, Markéta - Rettig, O. - Steiger, N. - Hubáček, Tomáš - Scholz, J.P. - Hocker, M. - Thonke, K. - Li, Y. - Qi, H. - Biskupek, J. - Kaiser, U. - Scholz, F.
Challenges and technological aspects of boron incorporation into AlGaN and AlN layers prepared by MOVPE.
EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. Grenoble, 2017 - (Eymery, J.), s. 67-67
[EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. Grenoble (FR), 18.06.2017-21.06.2017]
Grant - others:AV ČR(CZ) MSM100101603
Program: Program na podporu mezinárodní spolupráce začínajících výzkumných pracovníků
Institutional support: RVO:68378271
Keywords : MOVPE * AlGaN * AlBGaN * AlBN * photoluminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

AlGaN/AlN quantum well heterostructures are very promising for UV C LEDs, emitting at 270 nm. Possible applications are sterilization of water, air, or different medical equipment, different kinds of detectors used in biomedicine, optical data storage, etc. It is difficult to prepare defect-poor structures due to the large lattice mismatch of AlGaN and AlN. Possible solution is an introduction of boron to AlGaN to reduce lattice mismatch and manage strain. For AlBN with TEB pulsed, the hill formation starts for thicker layers, the density and height of the hills are lower. Also for AlBGaN, the structure quality was better for TEB pulsed source for thicker layers of 20 nm, the tips of columns are already visible by AFM.

Permanent Link: http://hdl.handle.net/11104/0275560