Enhanced extraction of silicon-vacancy centers light emission using bottom-up engineered polycrystalline diamond photonic crystal slabs

0474904 - FZÚ 2018 RIV US eng J - Journal Article
Ondič, Lukáš - Varga, Marián - Hruška, Karel - Fait, J. - Kapusta, Peter
Enhanced extraction of silicon-vacancy centers light emission using bottom-up engineered polycrystalline diamond photonic crystal slabs.
ACS Nano. Roč. 11, č. 3 (2017), s. 2972-2981. ISSN 1936-0851. E-ISSN 1936-086X
R&D Projects: GA ČR GJ16-09692Y; GA MŠMT LD15003; GA ČR(CZ) GBP208/12/G016
Institutional support: RVO:68378271 ; RVO:61388955
Keywords : photonic crystal * diamond * silicon vacancy center
OECD category: Condensed matter physics (including formerly solid state physics, supercond.); Physical chemistry (UFCH-W)
Impact factor: 13.709, year: 2017

Silicon vacancy (SiV) centers are optically active defects in diamond. The SiV centers, in contrast to nitrogen vacancy (NV) centers, possess narrow and efficient luminescence spectrum (centered at approximate to 738 nm) even at room temperature, which can be utilized for quantum photonics and sensing applications. However, most of light generated in diamond is trapped in the material due to the phenomenon of total internal reflection. In order to overcome this issue, we have prepared two-dimensional photonic crystal slabs from polycrystalline diamond thin layers with high density of SiV centers employing bottom up growth on quartz templates. We have shown that the spectral overlap between the narrow light emission of the SiV centers and the leaky modes extracting the emission into almost vertical direction (where it can be easily detected) can be obtained by controlling the deposition time. More than 14-fold extraction enhancement of the SiV centers photoluminescence was achieved compared to an uncorrugated sample.
Permanent Link: http://hdl.handle.net/11104/0271813