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Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

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    0471006 - FZU-D 2017 RIV NL eng J - Journal Article
    Stuckelberger, J. - Nogay, G. - Wyss, P. - Jeangros, Q. - Allebe, Ch. - Debrot, F. - Niquille, X. - Ledinský, Martin - Fejfar, Antonín - Despeisse, M. - Haug, F.J. - Löper, P. - Ballif, C.
    Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells.
    Solar Energy Materials and Solar Cells. Roč. 158, Dec (2016), s. 2-10. ISSN 0927-0248
    R&D Projects: GA MŠk LM2015087
    Institutional support: RVO:68378271
    Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 4.784, year: 2016

    We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell front side. Targeting enhanced transparency, the poly-Si layer is replaced with a mixed-phase silicon oxide/silicon layer.
    Permanent Link: http://hdl.handle.net/11104/0268491