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Photoluminescence of InGaN/GaN MQW structures – technological aspects
- 1.0469563 - FZÚ 2017 RIV US eng C - Conference Paper (international conference)
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Zíková, Markéta - Hulicius, Eduard
Photoluminescence of InGaN/GaN MQW structures – technological aspects.
ASDAM 2016. Danvers: IEEE, 2016 - (Haščík, Š.; Dzuba, J.; Vanko, G.), s. 41-44. ISBN 978-150903083-5.
[International conference on advanced semiconductor devices and microsystems /11./. Smolenice (SK), 13.11.2016-16.11.2016]
R&D Projects: GA MŠMT LO1603; GA ČR GA16-15569S
Institutional support: RVO:68378271
Keywords : scintillator * GaN * multiple quantum well * photoluminescence * cathodoluminescence * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
In this work results obtained on several types of InGaN/GaN multiple quantum well (MQW) scintillator structures are presented. Luminescence properties of scintillator structures with different number of QWs and different growth rate of QWs were measured. We show that the growth rate and QW number are very important parameters to increase the QW excitonic luminescence. Photoluminescence and cathodoluminescence are compared and discussed.
Permanent Link: http://hdl.handle.net/11104/0267357
Number of the records: 1