Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

0467514 - FZÚ 2017 RIV RU eng J - Journal Article
Krivyakin, G.K. - Volodin, V. - Kochubei, S.A. - Kamaev, G.N. - Purkrt, Adam - Remeš, Zdeněk - Fajgar, Radek - Stuchlíková, The-Ha - Stuchlík, Jiří
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing.
Semiconductors. Roč. 50, č. 7 (2016), s. 935-940. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA MŠMT LH12236
Institutional support: RVO:68378271 ; RVO:67985858
Keywords : hydrogenated amorphous silicon * nanocrystals * laser annealing
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.602, year: 2016

Si nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 to 250 mJ/cm2 (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.
Permanent Link: http://hdl.handle.net/11104/0265612