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Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process
- 1.0466446 - FZÚ 2017 RIV US eng C - Conference Paper (international conference)
Babchenko, O. - Vanko, G. - Dzuba, J. - Ižák, Tibor - Vojs, M. - Lalinský, T. - Kromka, Alexander
Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process.
ASDAM 2016. Danvers: IEEE, 2016 - (Haščík, Š.; Dzuba, J.; Vanko, G.), s. 157-160. ISBN 978-150903083-5.
[International conference on advanced semiconductor devices and microsystems /11./. Smolenice (SK), 13.11.2016-16.11.2016]
R&D Projects: GA ČR(CZ) GP14-16549P
Grant - others:AV ČR(CZ) SAV-16-02
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : diamond * GaN * HEMT * transistor * metallization
Subject RIV: BM - Solid Matter Physics ; Magnetism
The issue of gate metallization stability on AlGaN/GaN heterostructure during the diamond deposition process has been studied. Among tested Ni, Ir, NiO and IrO2 materials the iridium-based has the most promising characteristic to be used. The diamond growth in focused microwave plasma system on transistors with Ir and IrO2 Schottky contact metallization has been demonstrated and discussed.
Permanent Link: http://hdl.handle.net/11104/0264737
Number of the records: 1