Number of the records: 1  

Multicomponent garnet film scintillators for SEM electron detectors

  1. 1.
    0465105 - ÚPT 2017 RIV GB eng C - Konferenční příspěvek (zahraniční konf.)
    Schauer, Petr - Lalinský, Ondřej - Lučeničová, Z. - Kučera, M.
    Multicomponent garnet film scintillators for SEM electron detectors.
    EMC2016. The 16th European Microscopy Congress. Proceedings. Oxford: Wiley, 2016, s. 374-375. ISBN 9783527808465.
    [EMC2016. European Microscopy Congress /16./. Lyon (FR), 28.08.2016-02.09.2016]
    Grant CEP: GA ČR(CZ) GA16-05631S; GA TA ČR(CZ) TE01020118; GA MŠMT(CZ) LO1212; GA MŠMT ED0017/01/01
    Institucionální podpora: RVO:68081731
    Klíčová slova: electron detector * epitaxial film * GAGG:Ce * multicomponent garnet * scintillator * SEM
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
    Web výsledku:
    http://onlinelibrary.wiley.com/doi/10.1002/9783527808465.EMC2016.5236/pdf
    DOI: https://doi.org/10.1002/9783527808465.EMC2016.5236

    With an Everhart-Thornley (ET) scintillation detector in SEM, an image is formed by signal electrons emerged after an interaction of focused scanning electron beam with the specimen surface. In such a case a scintillator plays an important role as a fast electron-photon signal conversion element. A selection of fast scintillation materials is very limited, because the only mechanism for scintillators applicable in SEM ET detectors consists in allowed 5d-4f transitions in lanthanide ions. Unfortunately, the widely used Czochralski grown single crystal YAG:Ce scintillators suffer from an afterglow, which deteriorate the ability to transfer high image contrast. The mentioned afterglow in the bulk single crystal is caused by inevitable structural defects, such as antisite defects. These trap states are responsible not only for delayed radiative recombination causing the afterglow, but also for a degradation of the light yield. The aim of this study is to introduce new multicomponent garnet film scintillators for SEM electron detectors that due to the substitution of Al by Ga in the Gd3Al5O12:Ce garnet extensively supress the shallow traps resulting in a significant increase of the cathodoluminescence (CL) efficiency and in improvement of the afterglow characteristics.

    Trvalý link: http://hdl.handle.net/11104/0263899

     
     
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.