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Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
- 1.0463261 - FZÚ 2017 RIV GB eng J - Journal Article
Kriegner, D. - Výborný, Karel - Olejník, Kamil - Reichlová, Helena - Novák, Vít - Martí, Xavier - Gazquez, J. - Saidl, V. - Němec, P. - Volobuev, V.V. - Springholz, G. - Holý, V. - Jungwirth, Tomáš
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.
Nature Communications. Roč. 7, Jun (2016), 1-7, č. článku 11623. E-ISSN 2041-1723
R&D Projects: GA ČR GA15-13436S; GA MŠMT(CZ) LM2011026; GA ČR GB14-37427G
EU Projects: European Commission(XE) 268066 - 0MSPIN
Institutional support: RVO:68378271
Keywords : antiferromagnets * spintronics * anisotropic magnetoresistance
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 12.124, year: 2016
We demonstrate a multiple-stable memory device in epitaxial manganese telluride (MnTe) which is an antiferromagnetic counterpart of common II-VI semiconductors. Favorable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the applied magnetic field, analogous to ferromagnets.
Permanent Link: http://hdl.handle.net/11104/0262498
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