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Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction
- 1.0463257 - FZÚ 2017 RIV US eng J - Journal Article
Nádvorník, Lukáš - Olejník, Kamil - Němec, P. - Novák, Vít - Janda, Tomáš - Wunderlich, Joerg - Trojánek, F. - Jungwirth, Tomáš
Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction.
Physical Review. B. Roč. 94, č. 7 (2016), 1-10, č. článku 0753306. ISSN 1098-0121
R&D Projects: GA MŠMT LM2015087; GA ČR GB14-37427G
EU Projects: European Commission(XE) 268066 - 0MSPIN
Institutional support: RVO:68378271
Keywords : spintronics * opto-electronics
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.736, year: 2014
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p−n junction in GaAs/AlGaAs Hall-bar microdevices.
Permanent Link: http://hdl.handle.net/11104/0262491
Number of the records: 1