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Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction

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    0463257 - FZÚ 2017 RIV US eng J - Journal Article
    Nádvorník, Lukáš - Olejník, Kamil - Němec, P. - Novák, Vít - Janda, Tomáš - Wunderlich, Joerg - Trojánek, F. - Jungwirth, Tomáš
    Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction.
    Physical Review. B. Roč. 94, č. 7 (2016), 1-10, č. článku 0753306. ISSN 1098-0121
    R&D Projects: GA MŠMT LM2015087; GA ČR GB14-37427G
    EU Projects: European Commission(XE) 268066 - 0MSPIN
    Institutional support: RVO:68378271
    Keywords : spintronics * opto-electronics
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 3.736, year: 2014

    We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p−n junction in GaAs/AlGaAs Hall-bar microdevices.

    Permanent Link: http://hdl.handle.net/11104/0262491

     
     
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