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In situ Raman spectroelectrochemistry of p- and n-type doped diamond
- 1.0458882 - ÚFCH JH 2017 DE eng A - Abstract
Vlčková Živcová, Zuzana - Frank, Otakar - Petrák, Václav - Drijkoningen, S. - Haenen, K. - Nesládek, M. - Kavan, Ladislav
In situ Raman spectroelectrochemistry of p- and n-type doped diamond.
XXXth International Winterschool on Eklectronic Properties of Novel Materials.. Berlin: Institut für Festkörperphysik, TU Berlin, 2016. s. 161-162.
[International Winterschool on Eklectronic Properties of Novel Materials /30./. 13.02.2016-20.02.2016, Kirchberg in Tirol]
Institutional support: RVO:61388955 ; RVO:68378271
Keywords : electrochemistry * Raman spectroelectrochemistry * boron-doped diamond
Subject RIV: CG - Electrochemistry
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Permanent Link: http://hdl.handle.net/11104/0259101
File Download Size Commentary Version Access 0458882.pdf 0 1.1 MB Publisher’s postprint open-access
Number of the records: 1