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Cz grown 2-in. size Ce:Gd.sub.3./sub.(Al,Ga).sub.5./sub.O.sub.12./sub. single crystal; relationship between Al, Ga site occupancy and scintillation properties
- 1.0456552 - FZÚ 2016 RIV NL eng J - Journal Article
Kamada, K. - Kurosawa, S. - Průša, Petr - Nikl, Martin - Kochurikhin, V.V. - Endo, T. - Tsutumi, K. - Sato, H. - Yokota, Y. - Sugiyama, K. - Yoshikawa, A.
Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; relationship between Al, Ga site occupancy and scintillation properties.
Optical Materials. Roč. 36, č. 12 (2014), 1942-1945. ISSN 0925-3467. E-ISSN 1873-1252
Institutional support: RVO:68378271
Keywords : scintillator * single crystal growth
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.981, year: 2014
2-in. size Ce 1%:Gd3(Al1−xGax)5O12 (GAGG) single crystals with various Ga concentration of x = 2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration. Energy resolution was improved with decreasing Ga concentration and x = 2.4 sample showed best energy resolution of 4.2%@662 keV. The dependence of scintillation properties on crystal structure and Al–Ga was discussed.
Permanent Link: http://hdl.handle.net/11104/0257089
Number of the records: 1