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Characterisation of silicon carbide layers formed during BNCD deposition

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    0456477 - FZÚ 2016 GB eng A - Abstract
    Taylor, Andrew - Ashcheulov, Petr - Čada, Martin - Drahokoupil, Jan - Fekete, Ladislav - Klimša, Ladislav - Olejníček, Jiří - Remeš, Zdeněk - Čtvrtlík, R. - Tomáštík, J. - Janíček, P. - Mistrík, J. - Kopeček, Jaromír - Mortet, Vincent
    Characterisation of silicon carbide layers formed during BNCD deposition.
    Diamond Conference. Coventry: University of Warwick, 2015. P6.1-P6.3
    [De Beers Diamond Conference 2015. 06.07.2015-09.07.2015, Warwick]
    R&D Projects: GA ČR GA13-31783S; GA MŠMT LO1409; GA MŠMT(CZ) LM2011029
    Grant - others:OP VK(XE) CZ.1.07/2.3.00/20.0306
    Institutional support: RVO:68378271
    Keywords : silicon carbide * nano-crystalline diamond
    Subject RIV: BM - Solid Matter Physics ; Magnetism

    In this work, we further detail properties of silicon carbide (SiC) layers [1] grown by microwave plasma enhanced chemical vapour deposition with linear antenna delivery (MW-LA-PECVD) on silicon substrates using low CO2 concentrations and compare them with nano-crystalline diamond (NCD) layers grown using similar conditions. Structural, mechanical and optical properties of these layers are compared for their potential use as transparent hard coatings for optical IR windows.

    Permanent Link: http://hdl.handle.net/11104/0256994

     
     
Number of the records: 1  

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