Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

0456454 - FZÚ 2016 RIV US eng J - Journal Article
Morales-Masis, M. - de Nicolas, S.M. - Holovský, Jakub - De Wolf, S. - Ballif, C.
Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells.
IEEE Journal of Photovoltaics. Roč. 5, č. 5 (2015), s. 1340-1347. ISSN 2156-3381. E-ISSN 2156-3403
R&D Projects: GA ČR(CZ) GA14-05053S
Institutional support: RVO:68378271
Keywords : solar cells * amorphous * ITO * TCO
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.736, year: 2015

Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobility are preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy - as a function of the sputtering oxygen partial pressure.
Permanent Link: http://hdl.handle.net/11104/0256984