MeV ion beams generated by intense pulsed laser monitored by Silicon Carbide detectors

0448239 - FZÚ 2016 RIV GB eng C - Conference Paper (international conference)
Calcagno, L. - Musumeci, P. - Cutroneo, M. - Torrisi, L. - La Via, F. - Ullschmied, Jiří
MeV ion beams generated by intense pulsed laser monitored by Silicon Carbide detectors.
Journal of Physics: Conference Series. Vol. 508. Bristol: IOP Publishing, 2014, Č. 012009. ISSN 1742-6588.
[Plasma Physics by Laser and Applications 2013 Conference (PPLA2013). Lecce (IT), 02.10.2013-04.10.2013]
EU Projects: European Commission(XE) 284464 - LASERLAB-EUROPE
Institutional support: RVO:68378271
Keywords : MeV ions * plasma * SiC detector * PALS
Subject RIV: BH - Optics, Masers, Lasers

The high energy ions produced with intense pulsed laser were analyzed with SiC detectors. In order to realize high performances and radiation resistant detectors, high quality and thick epitaxial layer were grown on a substrate and a Schottky diodes were then realized. These detectors were employed to probe the plasma generated with a 300 ps laser at intensity of 1016W/cm2 operating at PALS. They show a fast response and a high sensitivity to high energy ions. Metallic and polymeric thin films were irradiated and the produced plasmas were monitored in forward and backward directions. The analysis of the time-of-flight spectra evidences the emission of protons and ions at different energies. The spectra were deconvolved with a shifted Maxwell Boltzmann distribution. We detected protons in the energy range 1.2 - 3.0 MeV and heavy ions between 1.0 MeV up to 40 MeV. The results were compared with the ones obtained by Thompson Parabola Spectrometer.
Permanent Link: http://hdl.handle.net/11104/0249986