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Quantum phase transitions in epitaxial graphene on SiC
- 1.0440980 - FZÚ 2015 DE eng A - Abstract
Vašek, Petr - Svoboda, Pavel - Smrčka, Ludvík - Jurka, Vlastimil - Strupinski, W. - ul Hassan, J. - Janzen, E. - Piot, B.
Quantum phase transitions in epitaxial graphene on SiC.
Graphene week 2013. Chemnitz: EPoSS, 2013. s. 202-202.
[Graphene week 2013. 02.06.2013-07.06.2013, Chemnitz]
R&D Projects: GA ČR GEGRA/10/E006
Institutional support: RVO:68378271
Keywords : graphene on SiC * magnetotransport
Subject RIV: BI - Acoustics
The temperature dependence of longitudinal magnetoresistance and Hall resistance has been studied in wide temperature range and in magnetic fields up to at least 20T. We are not able to reach charge neutrality point in our samples because of high concentration of carriers. Only to study plateau-plateau transition between the plateaus within filling factors v=6 and v=2 has been performed.
Permanent Link: http://hdl.handle.net/11104/0244045
Number of the records: 1