Development of n.sup.+./sup.-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results

0440411 - FZÚ 2015 RIV NL eng J - Journal Article
Unno, Y. - Edwards, S.O. - Pyatt, S. - Böhm, Jan - Mikeštíková, Marcela … Total 95 authors
Development of n⁺-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 765, Nov (2014), s. 80-90. ISSN 0168-9002. E-ISSN 1872-9576
R&D Projects: GA MŠMT(CZ) LG13009
Institutional support: RVO:68378271
Keywords : silicon strip * n⁺-in-p * P-type * Radiation-tolerant * HL-LHC * PTP
Subject RIV: BF - Elementary Particles and High Energy Physics
Impact factor: 1.216, year: 2014

We have been developing a novel radiation-tolerant n+-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910μm and slim edge space of 450μm, a gated punch-through protection structure, and connection of orphan strips of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
Permanent Link: http://hdl.handle.net/11104/0243501