Number of the records: 1  

Preparation of Thin Layers of Ferromagnetic Semiconductors

  1. 1.
    0439673 - ÚCHP 2015 CZ eng H - Proceedings (Czech conference)
    Koštejn, Martin
    Preparation of Thin Layers of Ferromagnetic Semiconductors.
    Praha: Česká technika - nakladatelství ČVUT, 2013. 7 s. ISBN 978-80-01-05344-7.
    [studentská vědecká konference fyziky pevných látek /3./. Dvorská bouda (CZ), 28.06.2013-02.07.213]
    Institutional support: RVO:67985858
    Keywords : room temperature ferromagnetism * pulsed laser deposition * diluted magnetic semiconductors
    Subject RIV: CF - Physical ; Theoretical Chemistry

    The paper reports on the experiments of preparation Mn diluted in Silicon. These materials are potential ferromagnetic semiconductors. Thin layer have been prepared by reactive pulsed laser deposition of Mn target under small pressure of volatile precursor (silane or germane). We estimate initial temperature 1 mn above surface as 1.9 eV. The prepared layers can contain 1-40% of Mn atoms in form of amorphous mixture of Mn and Si or nano-crystallized mixture of Mn and Ge. High temperature annealing or rapid laser annealing is needed for recrystallization of Mn:Si layers.
    Permanent Link: http://hdl.handle.net/11104/0242877

     
    FileDownloadSizeCommentaryVersionAccess
    SKMBT_C22015011914541.pdf403.3 MBPublisher’s postprintopen-access
     
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.