Surface and ultrathin-layer absorptance spectroscopy for solar cells

0439340 - FZÚ 2015 RIV NL eng C - Conference Paper (international conference)
Holovský, Jakub - Remeš, Zdeněk - De Wolf, S. - Ballif, C.
Surface and ultrathin-layer absorptance spectroscopy for solar cells.
Energy Procedia. Vol. 60. Amsterdam: Elsevier Ltd, 2014 - (Gordon, I.; Valenta, J.; Turan, R.; Atwater, H.; Mirabella, S.), s. 57-62. ISSN 1876-6102.
[E-MRS Spring Meeting 2014. Lille (FR), 26.05.2014-30.05.2014]
R&D Projects: GA MŠMT 7E12029; GA ČR(CZ) GA14-05053S
EU Projects: European Commission(XE) 283501 - Fast Track
Institutional support: RVO:68378271
Keywords : surface states * thin-film limit * ATR-FTIR * photothermal deflection spectrscopy * photocurrent spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism

The methods Photothermal Deflection Spectroscopy and Fourier Transform Photocurrent Spectroscopy were modified to measure defect absorptance at the semiconductor surfaces and in ultra-thin layers. We present a method allowing us to routinely probe the hydrogen content and microstructure of ultrathin layers on top of crystalline wafer. We study the effects of sample storage, annealing and light soaking on defect density and the hydrogen content. Surface-defect layers, present on 350 nm thick hydrogenated amorphous silicon, were studied and correlated to behavior of only 10 nm thick films of the same material. Interestingly, these distinct structures all exhibited similar behavior: loss of hydrogen due to <200°C annealing, practically no increase of defect density by light soaking, reduction of defect density just by storage in air. The observed behavior of the ultrathin layers is diametrically different from the usual behavior of bulk hydrogenated amorphous silicon.
Permanent Link: http://hdl.handle.net/11104/0242654