Multi – wavelength and intensity illumination of the GeSbS films

0436075 - ÚMCH 2015 CZ eng A - Abstract
Knotek, P. - Kincl, Miloslav - Tichý, Ladislav
Multi – wavelength and intensity illumination of the GeSbS films.
Advanced Architectures in Photonics 2014. Praha: Invelved, s.r.o, 2014. s. 27-27. ISBN N.
[Advanced Architectures in Photonics 2014. 21.09.2014-24.09.2014, Praha]
Institutional support: RVO:61389013
Keywords : thin film * photo-induced effects * ablation
Subject RIV: CA - Inorganic Chemistry

The results of photo-sensitivity of the virgin Ge24.9Sb11.6S63.5 film can be summarized as follows: - the magnitude of the saturated state (ΔEgopt) varies from the 2 meV (650 nm) to the 210 meV (535 nm) and the maximal change is reached by the slightly over-band gap photons; - the magnitude is connected with the penetration depth as well as a part of the absorbed photons or chemical composition; - light intensity controls the kinetics of the process; - high intensity illumination may lead to the different processes as crystallization or ablation.
Permanent Link: http://hdl.handle.net/11104/0239924