Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study

0434831 - ÚFCH JH 2015 RIV US eng J - Journal Article
Ek Weis, Johan - da Costa, Sara - Frank, Otakar - Kalbáč, Martin
Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study.
Journal of Physical Chemistry Letters. Roč. 5, č. 3 (2014), s. 549-554. ISSN 1948-7185
R&D Projects: GA MŠMT LL1301
Institutional support: RVO:61388955
Keywords : Bernal * graphene * isotopic labeling
Subject RIV: CF - Physical ; Theoretical Chemistry
Impact factor: 7.458, year: 2014

One of the greatest issues of nanoelectronics today is how to control the heating of the components. Graphene is a promising material in this area, and it is essential to study its thermal properties. Here, the effect of heating a bilayer structure was investigated using in situ Raman spectroscopy. In order to observe the effects on each individual layer, an isotopically labeled bilayer graphene was synthesized where the two layers were composed of different carbon isotopes. Therefore, the frequency of the phonons in the Raman spectra was shifted in relation to each other. This technique was used to investigate the influence of different stacking order. It was found that in bilayer graphene grown by chemical vapor deposition (CVD), the two layers behave very similarly for both Bernal stacking and randomly oriented structures, while for transferred samples, the layers act more independently. This highlights a significant dependence on the sample preparation procedure.
Permanent Link: http://hdl.handle.net/11104/0238812