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Room-temperature antiferromagnetic memory resistor

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    0434235 - FZÚ 2015 RIV GB eng J - Journal Article
    Martí, Xavier - Fina, I. - Frontera, C. - Liu, J. - Wadley, P. - He, P. - Paull, R.J. - Clarkson, J.D. - Kudrnovský, Josef - Turek, Ilja - Kuneš, Jan - Yi, D. - Chu, J.-H. - Nelson, C.T. - You, L. - Arenholz, E. - Salahuddin, S. - Fontcuberta, J. - Jungwirth, Tomáš - Ramesh, R.
    Room-temperature antiferromagnetic memory resistor.
    Nature Materials. Roč. 13, č. 4 (2014), s. 367-374. ISSN 1476-1122. E-ISSN 1476-4660
    R&D Projects: GA MŠMT(CZ) LM2011026; GA ČR(CZ) GAP204/11/1228
    EU Projects: European Commission(XE) 268066 - 0MSPIN
    Grant - others:AV ČR(CZ) AP0801
    Program: Akademická prémie - Praemium Academiae
    Institutional support: RVO:68378271 ; RVO:68081723
    Keywords : spintronics * antiferromagnets * memories
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 36.503, year: 2014

    We report a room-temperature bistable antiferromagnetic memory which produces negligible stray fields and is insensitive to strong magnetic fields.
    Permanent Link: http://hdl.handle.net/11104/0238338

     
     
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