Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

0433688 - FZÚ 2015 CH eng A - Abstract
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Komninou, Ph. - Hulicius, Eduard
Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 14-14
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA13-15286S
Institutional support: RVO:68378271
Keywords : metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * reflectance anisotropy
Subject RIV: BM - Solid Matter Physics ; Magnetism

Quantum dot (QD) and multiple QD structures with InAs/GaAs QDs covered by GaAsSb strain reducing layer (SRL) prepared by MOVPE are presented. The growth of structures was studied in situ by reflectance anisotropy spectroscopy (RAS), which offers direct observation of processes during the structure growth such as QD formation, and dissolution or surfacting of In and Sb atoms. Enhanced In surfacting was observed for structures with GaAsSb SRL. Possible ways, how to suppress surfacting of both types of atoms and how to prevent their transport on epitaxial surface to the subsequent QD layer in multiple QD layer structures, are suggested. Different interruptions, growth rates and temperatures of the separation layer growth are discussed with respect to the suppression of undesired surfacting of In and Sb atoms. The conclusions derived from RAS measurements are supported by HRTEM, AFM or PL results.
Permanent Link: http://hdl.handle.net/11104/0237854