Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy

0432528 - FZÚ 2015 RIV US eng J - Journal Article
Ponseca jr., C.S. - Němec, Hynek - Wallentin, J. - Anttu, N. - Beech, J.P. - Iqbal, A. - Borgström, M. - Pistol, M.-E. - Samuelson, L. - Yartsev, A.
Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy.
Physical Review. B. Roč. 90, č. 8 (2014), "085405-1"-"085405-7". ISSN 1098-0121
R&D Projects: GA ČR GA13-12386S
Grant - others:AVČR(CZ) M100101218
Institutional support: RVO:68378271
Keywords : time-resolved terahertz spectrocopy * semiconductor nanostructures * mobility * effective medium
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.736, year: 2014

Terahertz spectroscopy is employed for the noncontact measurement of transversal mobility in InP nanowires, wherein photonic effects (waveguiding of excitation beam and propagation of terahertz beam in a complex gradient environment) were successfully deconvoluted. Monte Carlo calculations accounting for electron localization and heavy doping were used to determine electron momentum relaxation time corresponding to electron mobility ≥3000 cm2/V s, which is similar to that in bulk InP. The developed approach paves a way for noncontact determination of charge mobility in advanced semiconductor nanostructures.
Permanent Link: http://hdl.handle.net/11104/0236868