Light trapping in thin-film solar cells measured by Raman spectroscopy

0432256 - FZÚ 2015 RIV US eng J - Journal Article
Ledinský, Martin - Moulin, E. - Bugnon, G. - Ganzerová, Kristína - Vetushka, Aliaksi - Meillaud, F. - Fejfar, Antonín - Ballif, C.
Light trapping in thin-film solar cells measured by Raman spectroscopy.
Applied Physics Letters. Roč. 105, č. 11 (2014), "111106-1"-"111106-4". ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA ČR GA14-15357S; GA MŠMT(CZ) LM2011026; GA MŠMT 7E12029
EU Projects: European Commission(XE) 283501 - FAST TRACK
Institutional support: RVO:68378271
Keywords : light trapping * microcrystalline silicon * thin film solar cell * Raman spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.302, year: 2014

In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (µc-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442nm, 514nm, 633nm, and 785nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the µc-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the µc-Si:H solar cells is obtained, demonstrating the validity of the introduced method.
Permanent Link: http://hdl.handle.net/11104/0236686