Large area deposition of boron doped nano-crystalline diamond films at low temperatures using microwave plasma enhanced chemical vapour deposition with linear antenna delivery

0431502 - FZÚ 2015 RIV CH eng J - Journal Article
Taylor, Andrew - Fekete, Ladislav - Hubík, Pavel - Jäger, Aleš - Janíček, P. - Mortet, Vincent - Mistrík, J. - Vacík, Jiří
Large area deposition of boron doped nano-crystalline diamond films at low temperatures using microwave plasma enhanced chemical vapour deposition with linear antenna delivery.
Diamond and Related Materials. Roč. 47, AUG (2014), s. 27-34. ISSN 0925-9635. E-ISSN 1879-0062
R&D Projects: GA MŠMT(CZ) LM2011026; GA MŠMT(XE) LM2011019
Institutional support: RVO:68378271 ; RVO:61389005
Keywords : large area * low temperature * boron doped nano-crystalline diamond * linear antenna MW PE CVD
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.919, year: 2014

We report on the preparation and characterisation of boron (B) doped nano-crystalline diamond (BNCD) layers grown over large areas (up to 50cm x 30cm) and at low substrate temperatures (<650°C) using microwave plasma enhanced chemical vapour deposition apparatus with linear antenna delivery apparatus (MW-LA-PECVD). B-NCD layers were grown in H2/CH4/CO2 and H2/CH4 gas mixtures with added trimethylboron (TMB). Layers with thicknesses of 150nm to 1μm have been prepared with B/C ratios up to 15000ppm over a range of CO2/CH4 ratios to study the effect of oxygen (O) on the incorporation rate of B into the solid phase and the effect on the quality of the BNCD with respect to sp3/sp2 ratio. Experimental results show the reduction of boron acceptor concentration with increasing CO2 concentration. Higher sp3/sp2 ratios were measured by Raman spectroscopy with increasing TMB concentration in the gas phase without CO2.
Permanent Link: http://hdl.handle.net/11104/0236110