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Variable shape E-beam writing: proximity effect simulation and correction of binary and relief structures

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    0429463 - ÚPT 2015 GB eng A - Abstract
    Urbánek, Michal - Matějka, Milan - Kolařík, Vladimír - Horáček, Miroslav - Krátký, Stanislav - Bok, Jan - Chlumská, Jana - Mikšík, P. - Vašina, J.
    Variable shape E-beam writing: proximity effect simulation and correction of binary and relief structures.
    39th International Conference on Micro and Nano Engineering MNE2013. Book of Abstracts. Cambridge: University of Cambridge, 2013. s. 582.
    [MNE2013. International Conference on Micro and Nano Engineering /39./. 16.09.2013-19.09.2013, London]
    Institutional support: RVO:68081731
    Keywords : rectangular shaped beam * proximity effect simulation * binary structures and relief structures
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

    During the e-beam writing, several effects occur, which can significantly change the desired resolution of designed patterns. The final pattern is mostly affected by two scattering effects in resist layer and substrate: forward scattering and backscattering. Due to this electron scattering effects, the exposed patterns can be significantly broader than the designed. This phenomenon, called proximity effect, causes that areas adjacent to the exposed ones receive nonzero electron dose and thus pattern can vary from the intended size.
    Permanent Link: http://hdl.handle.net/11104/0234576

     
     
Number of the records: 1