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Graphene. Properties, preparation, characterization and devices

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    0427982 - ÚFCH JH 2015 RIV GB eng M - Monography Chapter
    Frank, Otakar - Kalbáč, Martin
    Chemical vapor deposition (CVD) growth of graphene films.
    Graphene. Properties, preparation, characterization and devices. Cambridge: Woodhead Publishing, 2014 - (Skákalová, V.; Kaiser, A.), s. 27-49. Woodhead Publishing Series in Electronic and Optical Materials, 57. ISBN 978-0-85709-508-4
    R&D Projects: GA MŠMT LL1301
    Institutional support: RVO:61388955
    Keywords : graphene * chemical vapor deposition (CVD) * isotope labeling
    Subject RIV: CF - Physical ; Theoretical Chemistry

    The challenges and recent achievements in the chemical vapor deposition (CVD) production of graphene on nickel and copper substrates are reviewed. The formation of large-area monolayer domains, growth on single crystals and controlled formation of ordered multilayers are discussed in detail. Isotopic labeling is introduced as a tool to perform advanced studies on CVD graphene.
    Permanent Link: http://hdl.handle.net/11104/0233427

     
     
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