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Growth of silicon nanowires on ZnO thin film stimulated by VLS and PECVD processes for photovoltaic applications
- 1.0425863 - FZÚ 2014 VN eng C - Conference Paper (international conference)
Pham, T.T. - Le, V.T.H. - Cu, T.S. - Stuchlíková, The-Ha - Hruška, Karel - Ledinský, Martin - Stuchlík, Jiří
Growth of silicon nanowires on ZnO thin film stimulated by VLS and PECVD processes for photovoltaic applications.
Proceedings of IWNA 2013, 4th International Workshop on Nanotechnology and Application. Ho Chi Minh City: Laboratory for Nanotechnology, VNU, 2013, s. 411-414.
[IWNA 2013 - 4th International Workshop on Nanotechnology and Application. Vung Tau (VN), 14.11.2013-16.11.2013]
R&D Projects: GA MŠMT LH12236
Institutional support: RVO:68378271
Keywords : silicon nanowires (Si-NWs) * PECVD * ZnO * VLS process * Sn
Subject RIV: BM - Solid Matter Physics ; Magnetism
In this paper, we focus on Si-NWs which are fabricated on transparent conductive substrates by PECVD method using Sn as metal stimulated the catalyst process. The factors affecting the formation of Si-NWs such as plasma, temperature were examined. In particular, the influence of metal layers thickness on forming Sn nanoparticle catalysts was studied. Si-NWs properties were investigated by SEM and Raman spectroscopy. Our aim is using Si-NWs for nano structural solar cells fabrication.
Permanent Link: http://hdl.handle.net/11104/0231652
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