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Luminescence of quantum dot heterostructures in applied electric field
- 1.0423841 - FZÚ 2014 CZ eng K - Conference Paper (Czech conference)
Kubištová, Jana - Zíková, Markéta - Kuldová, Karla - Pangrác, Jiří - Hospodková, Alice - Hulicius, Eduard - Petříček, Otto - Oswald, Jiří
Luminescence of quantum dot heterostructures in applied electric field.
Studentská vědecká konference fyziky pevných látek /3./. Praha: Česká technika - nakladatelství ČVUT, 2013 - (Aubrecht, J.; Kalvoda, L.; Kučeráková, M.; Štěpánková, A.), s. 40-45. ISBN 978-80-01-05344-7.
[Studentská vědecká konference fyziky pevných látek /3./. Krkonoše (CZ), 28.06.2013-02.07.2013]
Institutional support: RVO:68378271
Keywords : quantum dot * InAs/GaAs * GaAsSb * luminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
In this work, photoluminescence (PL) and electroluminescence (EL) of samples with InAs/GaAs quantum dots were measured with electric voltage or current applied on the structure. The EL structures emitting at 1300 nm were prepared by using n-type substrate. By applying the electric voltage in reverse bias on the sample, the evinced PL may be switched off - it decreases rapidly with the applied voltage and is negligible at about 10 V. Such structures which PL intensity is tunable by applied voltage have a broad spectrum of applications in optoelectronics.
Permanent Link: http://hdl.handle.net/11104/0229898
Number of the records: 1