GaAsSb strain reducing layer covering InAs/GaAs quantum dots

0399637 - FZÚ 2014 CZ eng K - Conference Paper (Czech conference)
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Kubištová, Jana - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J. - Nikitis, F.
GaAsSb strain reducing layer covering InAs/GaAs quantum dots.
Studentská vědecká konference fyziky pevných látek /3./. Praha: Česká technika - nakladatelství ČVUT, 2013 - (Aubrecht, J.; Kalvoda, L.; Kučeráková, M.; Štěpánková, A.), s. 46-50. ISBN 978-80-01-05344-7.
[Studentská vědecká konference fyziky pevných látek /3./. Krkonoše (CZ), 28.06.2013-02.07.2013]
R&D Projects: GA ČR GA13-15286S; GA MŠMT 7AMB12GR034; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : quantum dot * strain reducing layer * InAs * GaAsSb
Subject RIV: BM - Solid Matter Physics ; Magnetism

GaAsSb is often used as a capping material for InAs quantum dots (QDs) due to its suitable conduction band alignment and suppression of In segregation from QDs during the capping process.We have found out that during the GaAsSb layer growth, Sb atoms segregate above InAs QDs, which is proved by the AFM and HRTEM measurements. For higher amount of Sb in GaAsSb, the measured photoluminescence (PL) has longer wavelength, but if it is too high, the structure may become type II with decreased PL intensity. For thick GaAsSb layer, the PL intensity decreases, because only big QDs participate to the PL.
Permanent Link: http://hdl.handle.net/11104/0226876