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High Curie temperatures at low compensation in ferromagnetic semiconductor (Ga,Mn)As

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    0397216 - FZÚ 2014 RIV US eng J - Journal Article
    Wang, M. - Edmonds, K. W. - Gallagher, B. L. - Rushforth, A.W. - Makarovský, O. - Patane, A. - Campion, R. P. - Foxon, C. T. - Novák, Vít - Jungwirth, Tomáš
    High Curie temperatures at low compensation in ferromagnetic semiconductor (Ga,Mn)As.
    Physical Review. B. Roč. 87, č. 12 (2013), , , "121301-1"-"121301-4". ISSN 1098-0121
    R&D Projects: GA MŠMT(CZ) LM2011026
    EU Projects: European Commission(XE) 268066 - 0MSPIN
    Grant - others:AV ČR(CZ) AP0801
    Program: Akademická prémie - Praemium Academiae
    Institutional support: RVO:68378271
    Keywords : ferrmagnetic semiconductor
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 3.664, year: 2013
    http://arxiv.org/abs/1211.3860

    We investigate the relationship between the Curie temperature and the carrier density in the ferromagnetic semiconductor (Ga,Mn)As.
    Permanent Link: http://hdl.handle.net/11104/0224832

     
     
Number of the records: 1  

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