A study of the structural properties of GaN implanted by various rare-earth ions

0395263 - ÚJF 2014 RIV NL eng J - Journal Article
Macková, Anna - Malinský, Petr - Sofer, Z. - Šimek, P. - Sedmidubský, D. - Mikulics, M. - Wilhelm, R. A.
A study of the structural properties of GaN implanted by various rare-earth ions.
Nuclear Instruments & Methods in Physics Research Section B. Roč. 307, č. 7 (2013), s. 446-451. ISSN 0168-583X. E-ISSN 1872-9584.
[18th International Conference on Ion Beam Modifications of Materials (IBMM). Qingdao, 02.09.2012-07.09.2012]
R&D Projects: GA ČR GA106/09/0125; GA MŠMT(XE) LM2011019
Institutional support: RVO:61389005
Keywords : rare earth implantation * GaN * depth profiles * RBS * Raman spectroscopy * AFM
Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
Impact factor: 1.186, year: 2013
http://www.sciencedirect.com/science/article/pii/S0168583X13000955

GaN layers with 0001 crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 x 10(15)-1 x 10(16) cm(-2). The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 x 10(15) cm(-2) while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 x 10(15) cm(-2) to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement.
Permanent Link: http://hdl.handle.net/11104/0223341