Number of the records: 1
Controlling of properties of MOVPE InAs/GaAs quantum dot structures for device application
- 1.0391055 - FZÚ 2013 HU eng A - Abstract
Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Oswald, Jiří - Vetushka, Aliaksi
Controlling of properties of MOVPE InAs/GaAs quantum dot structures for device application.
EuroNanoForum 2011 in partnership with Nanotech Europe - Coference - Exhibition - Matchmaking. 2011.
[EuroNanoForum 2011. 30. 05.2011-01.06. 2011, Budapest]
R&D Projects: GA ČR GAP102/10/1201; GA MŠMT LC510
Institutional research plan: CEZ:AV0Z10100521
Keywords : InAs/GaAs * Quantum Dots
Subject RIV: BM - Solid Matter Physics ; Magnetism
Self-assembled InAs/GaAs Quantum Dots (QDs) grown on GaAs substrates are intensively investigated due to their useful fundamental optical properties and great potential device application based on mature GaAs technology – in high performance semiconductor lasers, LEDs, memories, and detectors. The final properties of QD structures are influenced by many echnological parameters such as the amount of deposited InAs and its growth rate, the length of the waiting time after InAs deposition, composition and growth rate of the capping layer etc.
Permanent Link: http://hdl.handle.net/11104/0219937
Number of the records: 1