Influence of Gold Catalytic Layer on Growth of Silicon Nanowires

0390891 - FZÚ 2013 US eng A - Abstract
Müller, Martin - Duong, D.P. - Stuchlíková, The-Ha - Stuchlík, Jiří - Fejfar, Antonín - Kočka, Jan
Influence of Gold Catalytic Layer on Growth of Silicon Nanowires.
The Fourth International Forum on Multidisciplinary Education and Research for Energy Science. Honolulu, 2011. s. 7-7.
[The Fourth International Forum on Multidisciplinary Education and Research for Energy Science. 17.12.2011-21.12. 2011, Honolulu, Hawaii]
R&D Projects: GA MŠMT(CZ) LC06040; GA MŠMT LC510
EU Projects: European Commission(XE) 240826 - PolySiMode
Institutional research plan: CEZ:AV0Z10100521
Keywords : silicon nanowires * gold catalyst
Subject RIV: BM - Solid Matter Physics ; Magnetism

Layers of silicon nanowires on metal/glass substrate were studied. The substrate was formed by thin layer of gold on the Corning C7059 glass prepared using vacuum evaporation. Heating of gold layers in vacuum at 350 °C led to formation of small gold islands with lateral sizes depending on the thickness of the original layer. The size of islands started at 10 nm. Plasma enhanced CVD was used for the growth of silicon nanowires. Various thicknesses of metal layers were investigated. Thermal annealing in the hydrogen atmosphere at 350 °C and in RF discharge in hydrogen atmosphere at 180 °C were used for comparison with vacuum thermal treatment. Catalytic metal layers on the Corning substrate were characterised by SEM and AFM and the silicon nanowire layers by SEM. Typical nanowire was 50 nm thick and 3500 nm long. Also the type of crystallinity of nanowires was investigated by micro–Raman spectroscopy.
Permanent Link: http://hdl.handle.net/11104/0219766