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Hydrogen sensors made on InP or GaN with electrophoretically deposited Pd or Pt nanoparticles
- 1.0387579 - ÚFE 2013 RIV PL eng J - Journal Article
Žďánský, Karel - Černohorský, Ondřej - Yatskiv, Roman
Hydrogen sensors made on InP or GaN with electrophoretically deposited Pd or Pt nanoparticles.
Acta Physica Polonica A. Roč. 122, č. 3 (2012), s. 572-575. ISSN 0587-4246. E-ISSN 1898-794X
R&D Projects: GA MŠMT(CZ) OC10021
Institutional support: RVO:67985882
Keywords : semiconductor devices * nanostructures * sensors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.531, year: 2012
High quality Schottky barriers were prepared by applying colloidal graphite on polished wafers of n-type InP or n-type GaN partly covered with palladium or platinum nanoparticles (NPs). The NPs were deposited by electrophoresis from colloid solutions prepared by reverse micelle technique. Schottky diodes showed current-voltage characteristics of high rectification and high barrier. Under the best conditions found heretofore the detection limits of Schottky diodes were below 1 ppm of hydrogen in nitrogen.
Permanent Link: http://hdl.handle.net/11104/0220072
Number of the records: 1