Local photoconductivity of microcrystalline silicon thin films excited by 442 nm HeCd laser measured by conductive atomic force microscopy

0386854 - FZÚ 2013 RIV NL eng J - Journal Article
Ledinský, Martin - Fejfar, Antonín - Vetushka, Aliaksi - Stuchlík, Jiří - Kočka, Jan
Local photoconductivity of microcrystalline silicon thin films excited by 442 nm HeCd laser measured by conductive atomic force microscopy.
Journal of Non-Crystalline Solids. Roč. 358, č. 17 (2012), s. 2082-2085. ISSN 0022-3093. E-ISSN 1873-4812.
[International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) /24./. Nara, 21.08.2011-26.08.2011]
R&D Projects: GA MŠMT(CZ) LC06040; GA MŠMT(CZ) MEB061012; GA AV ČR KAN400100701
Grant - others:7. Framework programme of the European Community(XE) no. 240826
Institutional research plan: CEZ:AV0Z10100521
Keywords : amorphous and nanocrystalline silicon films * atomic force microscopy (AFM) * local photoconductivity
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.597, year: 2012
http://www.sciencedirect.com/science/article/pii/S0022309312000178

Microcrystalline silicon (μc-Si:H) thin films were studied by photo-conductive atomic force microscopy (PC-AFM) under top side illumination by HeCd 442 nm laser and/or by scattered light of AFM detection diode. In order to make the top side illumination possible, so called “nose” type cantilevers, with the tip at the end of cantilever, were used for local photo-current map measurements. Local current intensity under different illumination is discussed mainly from a point of view of the absorption depth of the used light. Diffusion length of charge carriers ~ 300 nm was estimated from comparison of the current levels under different illumination.
Permanent Link: http://hdl.handle.net/11104/0216097