Light trapping abilities of silicon thin films measured by Raman spectroscopy

0386621 - FZÚ 2013 RIV DE eng C - Conference Paper (international conference)
Ledinský, Martin - Hakl, M. - Ondič, Lukáš - Ganzerová, K. - Vetushka, Aliaksi - Fejfar, Antonín - Kočka, Jan
Light trapping abilities of silicon thin films measured by Raman spectroscopy.
Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition. München: WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG, 2012 - (Nowak, S.), s. 2431-2433. ISBN 3-936338-28-0.
[European Photovoltaic Solar Energy Conference and Exhibition (PVSEC) /17./. Frankfurt (DE), 24.09.2012-28.09.2012]
R&D Projects: GA MŠMT 7E10061; GA MŠMT(CZ) LM2011026; GA MPO FR-TI2/736
EU Projects: European Commission(XE) 240826 - PolySiMode
Institutional research plan: CEZ:AV0Z10100521
Keywords : light trapping * polycrystalline silicon (Si) * thin film solar cell * Raman spectoscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism

Raman spectroscopy is used as a tool for measuring the light trapping abilities of thin crystalline silicon films for photovoltaic applications. Comparison of samples with different scattering characteristic is reported and the significant difference in the absolute Raman intensities is explained by light trapping effects. Raman spectroscopy is proposed as a promising tool for in-line characterization of silicon thin films during fabrication of solar cell modules.
Permanent Link: http://hdl.handle.net/11104/0215916