Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation

0386379 - FZÚ 2013 RIV NL eng J - Journal Article
Holovský, Jakub - Schmid, M. - Stückelberger, M. - Despeisse, M. - Ballif, C. - Poruba, Aleš - Vaněček, Milan
Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation.
Journal of Non-Crystalline Solids. Roč. 358, č. 17 (2012), s. 2035-2038. ISSN 0022-3093. E-ISSN 1873-4812.
[International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) /24./. Nara, 21.08.2011-26.08.2011]
R&D Projects: GA MŠMT(CZ) 7E09057
EU Projects: European Commission(XE) 214134 - N2P
Institutional research plan: CEZ:AV0Z10100521
Keywords : amorphous silicon * photocurrent spectroscopy * surface states
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.597, year: 2012
http://www.sciencedirect.com/science/article/pii/S0022309311007411

The time evolution of surface defect density and width of space charge region in thin layer of amorphous silicon is observed experimentally by Fourier transform photocurrent spectroscopy. This work review the assumption that photocurrent is insensitive to surface defects for samples thinner that 1500nm. We show that correct evaluation based on simple optical model comprising layers representing surface defects and layers representing space charge region with reduced collection allows obtaining same results as from photothermal deflection spectroscopy. Our main approach is the comparison of photocurrent or photothermal deflection spectra measured in absorptance/transmittance mode from layer and substrate side of the thin film.
Permanent Link: http://hdl.handle.net/11104/0215678