Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy

0384214 - FZÚ 2013 RIV US eng C - Conference Paper (international conference)
Luňák, M. - Chobola, Z. - Vaněk, J. - Hulicius, Eduard
Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy.
28th International Conference on microelectronics. New York: IEEE, 2012, s. 343-346. ISBN 978-1-4673-0238-8.
[International Conference on Microelectronics (MIEL) /28./. Niš (RS), 13.05.2012-16.05.2012]
Institutional research plan: CEZ:AV0Z10100521
Keywords : noise * spectroscopy * laser
Subject RIV: BM - Solid Matter Physics ; Magnetism

Trasnport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE (Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology.
Permanent Link: http://hdl.handle.net/11104/0213931