Ultrafast carrier response of Br.sup.+./sup. -irradiated In.sub.0.53./sub.Ga.sub.0.47./sub.As excitedat telecommunication wavelengths

0377890 - FZÚ 2013 RIV US eng J - Journal Article
Fekete, Ladislav - Němec, Hynek - Mics, Zoltan - Kadlec, Filip - Kužel, Petr - Novák, Vít - Lorinčík, Jan - Martin, M. - Mangeney, J. - Delagnes, J.C. - Mounaix, P.
Ultrafast carrier response of Br⁺ -irradiated In_0.53Ga_0.47As excitedat telecommunication wavelengths.
Journal of Applied Physics. Roč. 111, č. 9 (2012), "093721-1"-"093721-8". ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA ČR(CZ) GP202/09/P099; GA MŠMT LC512; GA AV ČR(CZ) IAA100100902
Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z20670512
Keywords : THz * emiters * InGaAs * photoconductivity
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.210, year: 2012
http://link.aip.org/link/?JAP/111/093721

We present results of infrared pump-terahertz probe experiments applied to a set of In0.53Ga0.47As films irradiated with heavy ions (Br+). Photoexcitation at 1400 nm (0.89 eV) allowed us to characterize the response close to telecommunications' wavelengths whilst avoiding the intervalley carrier scattering observed when a shorter wavelength excitation is used. The lifetimes and mobilities of both electrons and holes were retrieved, and the trap filling and carrier diffusion were clearly observed. The In0.53Ga0.47As film irradiated by the dose of 1012 cm-2 exhibits simultaneously ultrashort electron lifetime (300 fs) and very high electron mobility (2800 cm2V-11s-1). These findings are particularly important for the design of terahertz emitters controlled by lasers operating at standard telecommunication wavelengths.
Permanent Link: http://hdl.handle.net/11104/0209917