Dopant enhanced neutralization of low-energy Li+ scattered from Si(111)

0377426 - ÚFE 2013 RIV US eng J - Journal Article
Gann, R. D. - Šroubek, Zdeněk - Yarmoff, J. A.
Dopant enhanced neutralization of low-energy Li+ scattered from Si(111).
Physical Review. B. Roč. 85, č. 16 (2012), s. 1653071-1653075. ISSN 1098-0121
Institutional support: RVO:67985882
Keywords : metal-surfaces
Subject RIV: JB - Sensors, Measurment, Regulation
Impact factor: 3.767, year: 2012
http://prb.aps.org/abstract/PRB/v85/i16/e165307

The neutralization of 3 keV Li+ ions scattered from Si(111) is measured as a function of doping density, dopant type, and hydrogen coverage. When the surfaces are saturated with hydrogen to unpin the Fermi level, the neutral fractions decrease for lightly doped samples but become anomalously large for highly doped n-type Si. A simple model that includes the many-body band-gap narrowing effect predicts the neutralization to good accuracy using a tunneling mechanism similar to the free-electron gas jellium model normally employed for ion/metal interactions, but excluding levels in the gap.
Permanent Link: http://hdl.handle.net/11104/0209585